Key Compatibility Considerations When Procuring Wet Processing Equipment

When procuring wet processing equipment, in addition to focusing on core indicators, the importance of compatibility cannot be overlooked.Compatibility directly relates to whether the equipment can properly adapt to production and deliver its intended performance, avoiding subsequent adaptation challenges. Otherwise, it will not only lead to idle equipment and waste but may also delay production schedules and increase additional costs.

Differences and Adaptation Logic of SC-1 and SC-2 Solution Ratios Between 7nm and 28nm Process Nodes

In semiconductor chip manufacturing, wet cleaning is a core process to ensure wafer cleanliness and maintain device yield. As the "gold standard" adopted by the industry for more than half a century, the RCA cleaning method’s core components—SC-1 (Ammonia-Peroxide Mixture, APM) and SC-2 (Hydrochloric Acid-Peroxide Mixture, HPM)—have their ratio designs directly determining cleaning effectiveness and wafer surface integrity. With the advancement of process nodes from 28nm to 7nm, the reduction in wafer feature size, increased complexity of surface structures, and enhanced sensitivity to contaminants necessitate precise iterations of SC-1 and SC-2 ratios to adapt to new process requirements. This article will delve into the ratio differences, causes, and regulation strategies of the two solutions across the two process nodes.

Adjustment of Equipment Inspection Frequency in Special Scenarios

New Equipment/After Major Overhaul: For the initial 3 months, intensified inspections are required (recommended weekly inspections; the regular frequency is typically monthly). Key inspection focuses include: sealing integrity (to prevent chemical leakage), chemical delivery accuracy (flow rate/concentration stability), chamber cleanliness (particle/metal impurity content), and wafer processing uniformity. Regular inspection frequency may be restored only after all indicators remain stable without fluctuations and process yield stays consistent for more than one consecutive month.

TGV Wet Etching Technology

On the path of the semiconductor industry toward higher integration and smaller dimensions, an innovative technology originating in 2008—TGV (Through Glass Via)—is emerging. As a revolutionary alternative to TSV (Through Silicon Via) technology, TGV is rewriting the rules of high-end chip packaging by leveraging the unique advantages of glass materials. Among its manufacturing processes, the wet etching technique, as a core step in TGV fabrication, is a precision art worthy of in-depth exploration.

Translation of Semiconductor Etchant Technical Content

Silicon-based Materials: The mixed solution of HF and nitric acid (e.g., HNA system) achieves isotropic etching via synergistic oxidation-dissolution, suitable for silicon through-vias (TSV) and shallow trench isolation (STI).

Dielectric Layers: Buffered HF (BHF) solution (HF:NH₄F = 6:1) selectively etches SiO₂ (rate: 100 nm/min) by stabilizing fluoride ion concentration, with a selectivity ratio of 100:1 for Si₃N₄.
Key Parameters: HF concentration must be controlled at 5%–49%, and temperature fluctuation should be within ±1℃ to avoid side reactions (e.g., toxic NO₂ generation from HF and nitric acid).